Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1984-07-12

1986-05-06

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Bad bit

G11C 702

Patent

active

045876380

ABSTRACT:
In the semiconductor memory device according to the present invention, when there is a defective portion in the memory cells, those memory cells are replaced by redundant memory cells. When defective portions are discovered in the memory cells, the fuse elements corresponding to the memory cells having the defective portions are cut off. Voltages of the select lines connected to the memory cells having the defective portions are held at an L level by the resistors. Due to this, the memory cells having the defective portions are not selected.

REFERENCES:
patent: 3940740 (1976-02-01), Coontz
patent: 4250570 (1981-02-01), Tsang et al.
Electronics--Mar. 13, 1980, pp. 115-121.
Kokkonen et al., "Redundancy Techniques for Fast Static RAMs," IEEE International Solid-State Circuits Conference, ISSCC, pp. 80-81, Feb. 18, 1981.

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