Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1999-02-24

2000-03-14

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

060381620

ABSTRACT:
A semiconductor memory device includes: a plurality of word lines; a plurality of drive lines; a word line driving section for activating one of the plurality of word lines in accordance with a row address; a column selection section for, in accordance with a column address, selecting one of a plurality of ferroelectric memory cells coupled to the activated word line; a plate driving signal application section for applying a plate driving signal to at least a selected one of the plurality of drive lines, the at least one selected drive line being associated with the activated word line; and a switching section for coupling or detaching the plurality of ferroelectric memory cells to or from the at least one selected drive line. The column selection section controls the switching section so that only the selected ferroelectric memory cell is coupled to the at least one selected drive line.

REFERENCES:
patent: 5517445 (1996-05-01), Imai et al.
patent: 5671174 (1997-09-01), Koike et al.
patent: 5764561 (1998-06-01), Nishimura
Sumi et al. "FA 16.2: A 256kb Nonvolitile Ferroelectric Memory at 3V and 100ns" (IEEE International Solid-State Circuits Conference 1994) Digest of Technical Papers 268-269.

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