Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-11-24

1996-01-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257350, 257382, 257534, 257622, H01L 2978, H01L 2992, H01L 2702, H01L 2968

Patent

active

054882427

ABSTRACT:
In a DRAM having a structure in which a storage node electrode is formed via an insulator film in a trench formed in a memory cell region to thereby form a capacitor, and in which the storage node electrode is connected in the source/drain regions of a MOSFET through a storage node contact formed in a part of the insulator film, the trench is disposed so as to deviate widthwise in a channel region of the MOSFET, so that the distance between adjacent element regions is reduced without causing misalignment of masks used in the formation of the storage node contact, thereby to provide a miniaturized high-reliability DRAM. In addition, the storage node contact and the trench can be formed in large size.

REFERENCES:
patent: 4734384 (1988-03-01), Tsuchiya
patent: 4980734 (1990-12-01), Inoue
patent: 5047815 (1991-08-01), Yasuhira et al.

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