Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-03
1999-11-16
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257324, H01L 2976, H01L 29788, H01L 29792
Patent
active
059863021
ABSTRACT:
A floating gate of a semiconductor memory device has a gate bird beak on an end portion thereof. Further, a positional relationship between the floating gate and a drain is controlled such that a depletion layer formed within the drain in a non-selected state of the semiconductor memory device faces the gate bird beak without interposing the drain therebetween. Accordingly, drain disturbance can be efficiently prevented.
REFERENCES:
patent: 5051794 (1991-09-01), Mori
patent: 5208175 (1993-05-01), Choi et al.
patent: 5306655 (1994-04-01), Kurimoto
patent: 5434813 (1995-07-01), Tamura et al.
patent: 5684317 (1997-11-01), Hwang
Fukatsu Shigemitsu
Kawaguchi Tsutomu
Okuno Takuya
Yogo Yukiaki
Denso Corporation
Nguyen Cuong Q
Tran Minh Loan
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