Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1996-02-08
1998-09-08
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Bad bit
3652257, 36523003, G11C 700
Patent
active
058055126
ABSTRACT:
A semiconductor memory device has one redundant memory cell block selection fuse circuit block for replacing a plurality of normal memory cell blocks with one or more redundant memory cell blocks. The number of the redundant memory cell block selection fuse circuit blocks is thereby reduced enough to restrain an increase in chip area. A lesser number of normal word lines than the number of normal word lines possessed by one normal memory cell block controlled by one normal decoder are set as a minimum replace unit, and a degree of replacing freedom can be improved.
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Koinuma Hiroyuki
Nakai Chikahiro
Kabushiki Kaisha Toshiba
Nguyen Tan T.
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