Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365201, 36518901, G11C 1122

Patent

active

055153127

ABSTRACT:
A semiconductor memory device comprising a pair of bit lines, a word line, a cell plate electrode, a memory cell connected to each of the bit lines, the word line and the cell plate electrode, and a prevention means that permits only a predetermined number of readouts of data stored in the memory cell, after which the data is destroyed and is not retrieved with subsequent readout attempts.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5345414 (1994-09-01), Nakamura
patent: 5381379 (1995-01-01), Fukumoto

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