Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-12-02

1999-10-05

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Capacitors

365145, 365226, G11C 1124

Patent

active

059634677

ABSTRACT:
In a semiconductor memory device having a plurality of memory cells in which each memory cell is formed of an address selection MOSFET and an information storing capacitor and the plate voltage consisting of an intermediate potential is supplied to the common electrode of the information storing capacitor, the memory access is enabled by indirectly detecting that the plate voltage has reached a predetermined potential near a intermediate potential with the voltage detecting circuit or timer circuit, inhibiting the selecting operation of the word lines or precharging of the pair of bit lines to the intermediate potential when the plate voltage is lower than the predetermined potential, and then canceling the above inhibit condition after the plate voltage has reached the predetermined potential.

REFERENCES:
patent: 5668753 (1997-09-01), Koike
patent: 5754466 (1998-05-01), Arase

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