Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1999-07-19

2000-08-08

Elms, Richard

Static information storage and retrieval

Systems using particular element

Flip-flop

257368, 257369, 257903, 257904, G11C 1100

Patent

active

061011207

ABSTRACT:
A semiconductor memory device which can reduce the size of a memory cell and increase the packing density is disclosed. Each memory cell comprises a p-type active region, an n-type active region, two word lines, a common gate line and a common gate line. Two memory cells are deviated by, for example, an amount of a half bit in the direction which perpendicularly crosses the word line direction. The memory cells are arranged with one of their parts overlapped with one another in the word line direction. Thus, the size of the memory cell can be reduced in the word line direction.

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patent: 6005296 (1999-12-01), Chan
A Low Cost, Microprocessor Compatible, 18.4.mu.m.sup.2, 6-T Bulk Cell Technology For High Speed SRAMS, VLSI Symposium Report, pp. 65-66, 1993.
A Novel 6.4 .mu.m.sup.2 Full-CMOS SRAM Cell with Aspect Ratio of 0.63 in a High-Performance 0.25.mu.m-Generation CMOS Technology, 1988 Symposium on VLSI Technology Digest of Technical Papers, pp.68-69.

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