Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1981-11-13

1984-08-14

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Erase

371 21, G11C 1140

Patent

active

044660812

ABSTRACT:
A semiconductor memory device is constituted by a MOS transistor having a floating gate for storing data. An erase gate, a portion of which is under a part of the floating gate, is arranged on the MOS transistor to discharge electrons from the floating gate. The MOS transistors are arranged in a matrix form in which the erase gates of all the MOS transistors are commonly connected and a data erase voltage is applied to the erase gates to erase the data.

REFERENCES:
patent: 4099196 (1978-04-01), Simko
patent: 4203153 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4357685 (1982-11-01), Daniele et al.
patent: 4375087 (1983-02-01), Wanlass
1980 IEEE International Solid-State Circuit Conference 152 (Feb. 1980) A 16Kb Electrically Erasable Nonvolatile Memory.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-117411