Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-02-28

1990-11-27

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365207, G11C 1134

Patent

active

049742078

ABSTRACT:
In a semiconductor memory device, an output of a sense amplifier circuit and a reference voltage of a reference voltage producing circuit are compared to decide whether a content of a selected memory cell is "1" or "0". A load characteristic of a load circuit of the reference voltage producing circuit is different from that of the sense amplifier circuit, so that current flowing through a reference field effect transistor can be increased to a level of current flowing through a memory cell in which "O" is stored. Therefore, a time in which an output voltage of the reference voltage producing circuit is lowered from a voltage set at the stand-by mode to the reference voltage set at the reading mode is shortened at the reading mode subsequent to the stand-by mode.

REFERENCES:
patent: 4799195 (1989-01-01), Iwahashi et al.
patent: 4802138 (1989-01-01), Shimamune

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