Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-09-06

1991-06-04

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

36518909, 36518911, 365218, G11C 1134

Patent

active

050220004

ABSTRACT:
A writing high voltage of one polarity or an erasing high voltage of another polarity is selectively fed, in accordance with a writing or erasing operation mode, via a switch MOSFET to the word line of a non-volatile memory element designated by an address signal. The potential of a well region, where the switch MOSFET is existent, is changed in conformity with the switching action of the relevant switch MOSFET so as to control the switch MOSFET. Due to this arrangement, the potential of the well region with the non-volatile memory elements existing thereon can be retained at a fixed value, so that the high voltage generator is required merely to drive the selected word line of the memory array (and not the well in which the memory elements are formed). Consequently, the requisite current supply capability of the high voltage generator can be diminished.

REFERENCES:
patent: 4769787 (1988-09-01), Furusawa et al.
Nikkei Electronics 1986 (No. 388), pp. 142-145, "64 Kbit Peripheral CMOS EEPROMs".

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1032114