Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1984-02-08

1986-08-05

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Bad bit

G11C 700

Patent

active

046047301

ABSTRACT:
A semiconductor memory device includes a plurality of memory cell blocks corresponding to output terminals, and a redundancy memory cell block for replacing a faulty memory cell block among the memory cell blocks, the redundancy memory cell block having a first specific area for storing a first predetermined data of electronic signatures. Each of the memory cell blocks having a second specific area for storing a second predetermined data equal to a divided one of the first predetermined data in a one to one correspondence. The semiconductor memory device further includes a circuit for selectively reading, when one of the memory cell blocks is replaced by the redundancy memory cell block, a divided one of the first predetermined data corresponding to the second predetermined data stored inthe memory cell block to be replaced by the redundancy memory cell block. The second predetermined data can be correctly read out even when a faulty memory cell block is replaced with the redundancy memory cell block.

REFERENCES:
patent: 4460998 (1984-07-01), Yamada et al.
patent: 4471472 (1984-09-01), Young
IEEE International Solid-State Circuits Conference, "Redundancy Techniques for Fast Static RAMs", Kokkonen et al., ISSCC 81, 2/18/81, pp. 80-81.
IEEE International Solid-State Circuits Conference, "A 128K EPROM with Redundancy", Spaw et al., ISSCC 82, 2/11/82, pp. 112-113.

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