Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1997-01-29
1997-12-02
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Differential sensing
3652335, 365203, G11C 700
Patent
active
056943695
ABSTRACT:
A semiconductor memory device is proposed wherein dummy memory cells are provided at the most remote end of each word line with the object of enabling output of correct data despite the large or varying capacity between lines accompanying the trend to large capacity and despite variation in operating times of amplification and other circuits. These dummy memory cells are connected by dummy bit lines having greater line width and narrower line spacing than bit lines. A dummy amplification circuit is provided that is activated by a sense amplification enable signal amplifies data of the dummy bit lines. An internal control signal generation circuit determines the timing of changes in level to the inactive level of the word line enable signal, sense amplification enable signal, and data latch signal according to output signals of the dummy amplification circuit.
REFERENCES:
patent: 5029135 (1991-07-01), Okubo
patent: 5502681 (1996-03-01), Park
NEC Corporation
Zarabian A.
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