Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3652335, 365203, G11C 700

Patent

active

056943695

ABSTRACT:
A semiconductor memory device is proposed wherein dummy memory cells are provided at the most remote end of each word line with the object of enabling output of correct data despite the large or varying capacity between lines accompanying the trend to large capacity and despite variation in operating times of amplification and other circuits. These dummy memory cells are connected by dummy bit lines having greater line width and narrower line spacing than bit lines. A dummy amplification circuit is provided that is activated by a sense amplification enable signal amplifies data of the dummy bit lines. An internal control signal generation circuit determines the timing of changes in level to the inactive level of the word line enable signal, sense amplification enable signal, and data latch signal according to output signals of the dummy amplification circuit.

REFERENCES:
patent: 5029135 (1991-07-01), Okubo
patent: 5502681 (1996-03-01), Park

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-807201

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.