Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1989-07-18

1991-06-11

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365159, 3652256, G11C 1140

Patent

active

050238361

ABSTRACT:
A semiconductor memory device comprises a transistor and a resistor. The transistor has negative differential resistance characteristics in an emitter current or a source current thereof. Therefore the semiconductor memory device has few elements and a simplified configuration, and thus high speed operation and large scale integration can be realized. Further, in the semiconductor memory device of the present invention, several variations in design are possible.

REFERENCES:
patent: 3222542 (1965-12-01), Amodei
N. Yokoyama et al, "A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)", pp. L853-L854, Japanese Journal of Applied Physics, vol. 24, No. 11, Nov., 1985.
N. Yokoyama et al, "Flip-Flop Circuit Using a Resonant-Tunneling Hot Electron Transistor (RHET)", pp. 1228-1229, Electronics Letters, vol. 22, No. 23, Nov. 6, 1986.
Chung-Yu Wu and Yih-Fang Liu, "A High-Density MOS Static RAM Cell Using the Lambda Bipolar Transistor," IEEE Journal of Solid-State Circuits, vol. SC-18, No. 2, Apr. 1983, pp. 222-224.

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