Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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Details

365149, 365207, 365190, 365202, G11C 1122

Patent

active

054306710

ABSTRACT:
A semiconductor memory device comprising bit line, word line, plate electrode, ferroelectric capacitor having first electrode and second electrode, said second electrode being coupled to said plate electrode, MOS transistor the source of which is coupled to said first electrode, the gate is coupled to said word line and the drain is coupled to said bit line, and adjusting capacitor for adjusting bit line capacitance coupled to said bit line. The adjusting capacitor is provided to increase the potential difference for reading and control occurrence of operating errors.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5031143 (1991-07-01), Jaffe
patent: 5218566 (1993-06-01), Papaliolios
patent: 5270967 (1993-12-01), Moazzami et al.

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