Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1994-01-19

1995-01-17

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365226, G11C 1300, G11C 1122

Patent

active

053831500

ABSTRACT:
A ferroelectric capacitor and another ferroelectric capacitor or dielectric capacitor have one of their electrodes commonly connected to an address selection switching element with its gate connected to a word line and the other of their electrodes connected to first and second plate voltage supply line, respectively. Two operation modes are provided. A first operation mode has a first voltage supplied to a first plate voltage supply line and a second voltage to a second plate voltage supply line. A second operation mode has the second voltage supplied to the first plate voltage supply line and the first voltage to the second plate voltage supply line.

REFERENCES:
patent: 5357460 (1994-10-01), Yusuki et al.

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