Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Bad bit

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36523003, G11C 700, G11C 800

Patent

active

060409991

ABSTRACT:
A semiconductor memory device includes a main memory section, a redundant memory section, a memory cell selection section, a sensing amplification section, a data replacement section, and a data selection section. The redundant memory section includes a replacement cell data memory section for storing replacement cell data to replace cell data in a prescribed memory cell in the main memory section, and a control signal generation section for generating a control signal based on an input address. The memory cell selection section simultaneously selects prescribed cells as a plurality of memory cells corresponding to a prescribed page in the main memory section based on the input address. The sensing amplification section simultaneously senses cell data corresponding to a selected plurality of memory cells as page data. A supply of the replacement cell data and the control signal from the redundant memory section to the data replacement section is performed in a time period from the time when the input address is determined until a time when the page data to be output from the sensing amplification section is determined.

REFERENCES:
patent: 5452258 (1995-09-01), Hotta
patent: 5483491 (1996-01-01), Yoshioka et al.
patent: 5561632 (1996-10-01), Arase et al.
patent: 5619473 (1997-04-01), Hotta
patent: 5654922 (1997-08-01), Arase et al.

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