Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1982-04-07

1985-10-29

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365189, 365228, G11C 1140

Patent

active

045503907

ABSTRACT:
A semiconductor memory having a construction making it less susceptible to .alpha.-rays. The memory includes a pair of transistors connected in a flip-flop arrangement. In each memory transistor there is a buried region of high concentration which contacts the collector region of the same impurity. The base region consists of a relatively low concentration part, in which the emitter or emitters are formed, and a high concentration part, to which the base electrode is attached. The high concentration part of the base region extends down to and protrudes into the high concentration buried region, resulting in a higher than usual collector-base capacitance. The latter causes the voltage change due to .alpha.-rays to be less than it otherwise would be.

REFERENCES:
patent: 4366554 (1982-12-01), Aoki et al.
patent: 4419745 (1983-12-01), Toyoda

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-731330