Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1996-09-30

1998-10-06

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365145, 36518504, G11C 700

Patent

active

058187715

ABSTRACT:
A semiconductor memory device, divided into plural blocks, includes a memory array having a non-volatile memory element in which address access times for the read cycle and the write cycle are substantially equivalent to one another (for example, a ferroelectric memory element). Plural storage elements stores the information for write protection/permission corresponding to each of the blocks, respectively. A setting circuit is provided to set the information for write protection/permission to the plural storage elements. The setting circuit sets the write-protection information to the plural storage elements at the write cycle after designated plural read cycles. Therefore, the write protection/permission can be set in block units block by block, so that the write-protected areas for a ROM and a RAM formed by the non-volatile memory element can be set freely. Furthermore, the complexity of the setting procedure for write protection/permission serves to prevent accidental false setting caused by system runaway or the like.

REFERENCES:
patent: 5363334 (1994-11-01), Alexander et al.
patent: 5396471 (1995-03-01), Kitsu
patent: 5467081 (1995-11-01), Drews et al.
patent: 5513136 (1996-04-01), Fandrich et al.
patent: 5668760 (1997-09-01), Hazen

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-86467