Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-03-11

1998-10-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, 257904, 257393, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058180893

ABSTRACT:
In a memory cell region, there are formed a pair of driver transistors and a pair of access transistors. On an insulating layer covering these transistors, there are formed a pair of high resistances. To cover the high resistances, there is formed an insulating layer. On the insulating layer, there is formed a word line. To cover the word line, there is formed an insulating layer and, on the insulating layer, there are formed a GND wiring and bit lines. Thereby, a semiconductor memory device capable of stabilized operation even when a lowered power source voltage is used can be obtained.

REFERENCES:
patent: 5107322 (1992-04-01), Kimura
patent: 5350933 (1994-09-01), Yoshihara

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-81287