Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1995-07-17
1998-02-03
Clawson, Jr., Joseph E.
Static information storage and retrieval
Systems using particular element
Semiconductive
36518912, 365194, 365221, 365240, G11C 1134
Patent
active
057151920
ABSTRACT:
A plurality of static memory cells including CMOS flip-flops and switching MOS transistors are connected in series, thereby forming a memory cell unit in which one end of data reading is connected to bit lines. A series of the memory cell units are arranged, thereby forming a memory cell array. Reset terminals are provided for releasing cell data and causing the cell to function temporarily as a transfer gate of data.
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IEEE International Solid-State Circuits Conference, Feb. 1986, Nobumichi Okazaki, et al., "A 30ns 256K Full CMOS SRAM", pp. 204-205.
Hasegawa Takehiro
Masuoka Fujio
Clawson Jr. Joseph E.
Kabushiki Kaisha Toshiba
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