Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2009-06-22
2011-11-15
Nguyen, Viet (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S210100, C365S210140, C365S189080, C365S210130, C365S210150, C365S213000, C365S214000
Reexamination Certificate
active
08059480
ABSTRACT:
A semiconductor memory device includes a plurality of memory cells configured to correspond to each of a plurality of word lines for storing data; a plurality of reference memory cells configured to include first and second magnetic memory devices, whose lower electrodes are commonly connected to each other, to generate a reference current corresponding to each of the memory cells; and a sense amplification unit configured to sense and amplify the reference current and a data current corresponding to a memory cell connected to an activated word line among the word lines.
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Notice of Allowance issued from Korean Intellectual Property Office on Aug. 31, 2011.
Lee Sung-Yeon
Oh Young-Hoon
Hynix / Semiconductor Inc.
IP & T Group LLP
Nguyen Viet
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