Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-07-27

2011-11-29

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S189070, C365S230030

Reexamination Certificate

active

08068358

ABSTRACT:
A semiconductor memory device comprising: a plurality of cell arrays having a plurality of first wirings and a plurality of second wirings intersecting each other and memory cells disposed at intersections between said first wirings and said second wirings, each containing a variable resistive element that is electrically rewritable and stores a resistance value as data; and a control circuit for selectively driving said first wirings and said second wirings; wherein said control circuit performs a first operation of applying a voltage required for one operation selected from the data write, read and erase operations to said one memory cell via one combination of said first and second wirings and a second operation of applying a voltage required for an operation selected from the data write, read and erase operations and different from the first operation to said other memory cell via another combination of said first and second wirings.

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U.S. Appl. No. 12/370,111, filed Feb. 12, 2009, Hiroshi Maejima, et al.

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