Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-09-14

2011-10-18

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000

Reexamination Certificate

active

08040718

ABSTRACT:
A semiconductor memory device includes a memory cell having a first resistance state and a second resistance state, a bit line connected to the memory cell, a reference cell fixed to the first resistance state, a reference bit line connected to the reference cell, and a generation circuit configured to generate a reading voltage and a reference voltage. The generation circuit includes a constant current source connected to a first node, a first replica cell connected between the first node and a second node and fixed to the first resistance state, a second replica cell connected between the second node and a third node and fixed to the second resistance state, a first resistance element connected between the first node and a fourth node, and a second resistance element connected between the fourth node and the third node.

REFERENCES:
patent: 6385109 (2002-05-01), Naji
patent: 7852665 (2010-12-01), Chen et al.
patent: 2006/0227598 (2006-10-01), Sakimura et al.
patent: 2009/0010045 (2009-01-01), Ueda

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