Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2009-07-14
2011-11-22
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S049130, C365S065000, C365S117000, C365S149000
Reexamination Certificate
active
08064240
ABSTRACT:
A memory includes word lines; plate lines; first to eighth bit lines; cell transistors; ferroelectric capacitor connected in parallel with cell transistors; sense amplifiers, wherein cell transistors and ferroelectric capacitors configure cells, the cells are connected in series to configure first to eighth cell blocks, the cell blocks are connected to the same word lines, first ends of the cell blocks are respectively connected to the bit lines, second ends of the cell blocks are respectively connected to the different plate lines, one of the first to the fourth bit lines and one of the fifth to the eighth bit lines are configured to be selectively connected to the sense amplifier during an operation, numbers of the cells connected in series between the bit lines and the plate lines are different in the first to the fourth cell blocks, and are different in the fifth to the eighth cell blocks.
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Alrobaie Khamdan
Kabushiki Kaisha Toshiba
Knobbe Martens Olson & Bear LLP
Nguyen Van-Thu
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