Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2010-01-05
2011-12-20
Hidalgo, Fernando N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S194000, C365S233100, C365S149000, C365S150000, C365S186000, C365S189011, C365S233120
Reexamination Certificate
active
08081533
ABSTRACT:
A semiconductor memory device is provided between a refresh request circuit and a command decoder, and includes a refresh synchronous circuit for deactivating a refresh request if an external access request is output from the command decoder. The semiconductor memory device further includes a clock phase adjusting unit that generates a delay to a clock, where the delay is same or longer than the time taken from when the external access request is issued until when a critical path is passed, and the delay is also shorter than one cycle. Then a flip-flop retrieves the request from the command decoder at the clock timing from the clock phase adjusting unit to supply it to the memory cell array.
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patent: 7505346 (2009-03-01), Kobayashi
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patent: 3376998 (2002-12-01), None
Foley & Lardner LLP
Hidalgo Fernando N.
Renesas Electronics Corporation
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