Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-07-28

2011-10-04

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S207000

Reexamination Certificate

active

08031507

ABSTRACT:
The sense amplifier detects and amplifies a signal read via bit lines from the ferroelectric capacitor of the memory cell. The dummy capacitor provides a reference voltage to bit lines. The dummy capacitor includes a first dummy capacitor and a second dummy capacitor. The first dummy capacitor is provided with a first dummy plate potential at one end to set the reference voltage to a certain potential. The other end is connected to the bit line. The second dummy capacitor is provided with a second dummy plate potential at one end to fine-tune the reference voltage from the certain potential. The other end thereof is connected to the bit line.

REFERENCES:
patent: 5406510 (1995-04-01), Mihara et al.
patent: 6026009 (2000-02-01), Choi et al.
patent: 6853600 (2005-02-01), Itoh

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