Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-08-15

2010-10-26

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S226000, C365S227000, C365S228000, C365S229000

Reexamination Certificate

active

07821814

ABSTRACT:
When threshold voltages of constituent transistors are reduced in order to operate an SRAM circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the SRAM circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of MOS transistors in SRAM memory cells MC by controlling a potential of a source line ssl of the driver MOS transistors in the memory cells.

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