Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2009-03-27
2010-12-28
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S225700
Reexamination Certificate
active
07859923
ABSTRACT:
The present invention provides a semiconductor memory device that includes: a fuse circuit having multiple fuse elements; and a fuse selection circuit connected to an internal address signal line that receives an address signal externally inputted. The fuse circuit is connected to the fuse selection circuit to receive an output from the fuse selection circuit, is supplied with an externally inputted trigger signal that permits nonvolatile recording of the fuse elements, and, in response to the output and the trigger signal, records the fuse element corresponding to the internal address signal line among the plurality of fuse elements while recording at least one of the plurality of fuse elements other than the fuse element thus recorded.
REFERENCES:
patent: 6178125 (2001-01-01), Niiro
patent: 7411845 (2008-08-01), Kodama
patent: 2001-023393 (2001-01-01), None
Foley & Lardner LLP
Hoang Huan
Renesas Electronics Corporation
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