Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-02-15

2010-06-15

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27085, C257SE27098

Reexamination Certificate

active

07737481

ABSTRACT:
A semiconductor memory device has bit lines, capacitors, bit contacts and capacitor contacts, wherein the bit lines are provided over a semiconductor substrate, the bit lines are connected to the semiconductor substrate through the bit contacts, the capacitors are connected to the semiconductor substrate through the capacitor contacts, and wherein in two adjacent bit lines, pitch d2(first pitch) representing a pitch of portions provided with the capacitor contacts is larger than pitch d3(second pitch) representing a pitch of portions provided with the bit contacts, and distance d4between two such bit lines in the portions provided with the bit contacts is larger than width d5of the bit lines in the portions provided with the bit contacts.

REFERENCES:
patent: 5665623 (1997-09-01), Liang et al.
patent: 2002/0005590 (2002-01-01), Keeth
patent: 2003/0211673 (2003-11-01), Nakamura et al.
patent: 2005/0218440 (2005-10-01), Park
patent: 2007/0268771 (2007-11-01), Takemura et al.
patent: 06-005811 (1994-01-01), None
S. M. Sze. Semiconductor Devices. Physics and Technology, 2nd Edition, (C) 2002 John Wiley and Sons, p. 398.

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