Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2008-08-05
2010-12-28
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S230050
Reexamination Certificate
active
07859889
ABSTRACT:
In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.
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Ishii Tomoyuki
Kameshiro Norifumi
Takemura Riichiro
Le Vu A
Miles & Stockbridge P.C.
Renesas Electronics Corporation
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