Static information storage and retrieval – Read/write circuit – Testing
Patent
1995-06-07
1996-11-12
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Testing
365218, G11C 1300
Patent
active
055746934
ABSTRACT:
A semiconductor memory device characterized by the fact that the disturb test time of the semiconductor memory device can be shortened, and the power consumption can be cut.
In the disturb test for the semiconductor memory device in this invention, multiple word lines are selected at the same time with a prescribed interval corresponding to the element isolation layout. As the word lines are selected corresponding to the element isolating layout, the interference caused by the element isolation state can be excluded. Since multiple word lines are selected at the same time, the time of operation can be shortened. Since the word lines are maintained in the selected state while the sense amplifiers are not reset, there is no increase in the power consumption although multiple word lines are selected at the same time.
REFERENCES:
patent: 4575823 (1986-03-01), Fitzpatrick
patent: 4587629 (1986-05-01), Dill et al.
patent: 4890263 (1989-12-01), Little
Inui Takashi
Ogata Yoshihiro
Okuzawa Kiyotaka
Burton Dana L.
Donaldson Richard L.
Fears Terrell W.
Kesterson James C.
Texas Instruments Incorporated
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