Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-09-17
2010-10-12
Mai, Son L (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S211000, C365S212000
Reexamination Certificate
active
07813205
ABSTRACT:
A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
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Fujitsu Semiconductor Limited
Mai Son L
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