Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-01-05

2010-02-23

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S226000

Reexamination Certificate

active

07668001

ABSTRACT:
A semiconductor memory device (1) comprises a memory cell array (100) in which memory cells each have a variable resistance element and the memory cells in the same row are connected to a common word line and the memory cells in the same column are connected to a common bit line, wherein during a predetermined memory action, the voltage amplitude of the voltage pulse applied to an end of at least one of the selected word line and the selected bit line is adjusted based on the position of the selected memory cell in the memory cell array (100) so that the effective voltage amplitude of a voltage pulse applied to the variable resistance element of the selected memory cell to be programmed or erased falls within a certain range regardless of the position in the memory cell array (100).

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patent: 2003/0219534 (2003-11-01), Zhuang et al.
patent: 2004/0257864 (2004-12-01), Tamai et al.
patent: 2005/0169093 (2005-08-01), Choi et al.
patent: 2006/0002174 (2006-01-01), Hosoi et al.
patent: 2006/0067106 (2006-03-01), Mori et al.
International Search Report for PCT/JP2006/309086 mailed Aug. 22, 2006.

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