Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-07-11

2010-11-16

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189050, C365S203000, C365S207000, C365S210100, C365S230060

Reexamination Certificate

active

07835171

ABSTRACT:
A resistance variable memory reduces the nonuniformity of resistance values after programming, so that a rewrite operation can be performed on a memory cell at high speed. A reference resistor is connected in series with the resistance variable memory cell, and a sensor amplifier detects whether the potential at an intermediate node between the memory cell and the reference resistor exceeds a given threshold voltage, so as to stop the write operation based on a detection result.

REFERENCES:
patent: 2004/0100835 (2004-05-01), Sugibayashi et al.
patent: 2004/0114444 (2004-06-01), Matsuoka
patent: 2007/0127302 (2007-06-01), Okamoto et al.
patent: 2004-234707 (2004-08-01), None
Kozicki et al., “Non-Volatile Memory Based on Sold Electrolytes,” Non-Volatile Memory Technology Symposium 2004, Nov. 2004, pp. 10-17.
Sakamoto et al., “A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, IEEE International Sold-State Circuits Conference, Feb. 2004, vol. 1.

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