Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-10-03

2009-12-29

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S072000, C365S174000, C365S189090

Reexamination Certificate

active

07639525

ABSTRACT:
A semiconductor memory device for reducing the power consumption of an entire low power consumption SRAM LSI circuit employing scaled-down transistors and of increasing the stability of read and write operations on the memory cells by reducing the subthreshold leakage current and the leakage current flowing from the drain electrode to the substrate electrode is provided. The semiconductor memory device also prevents an increase in the number of transistors in a memory cell and thereby preventing an increase in the cell area, and ensures stable operation of an SRAM memory cell made up of SOI or FD-SOI transistors having a BOX layer by controlling the potentials of the wells under the BOX layers of the drive transistors.

REFERENCES:
patent: 5986924 (1999-11-01), Yamada
patent: 6643173 (2003-11-01), Takemura
patent: 6898111 (2005-05-01), Yamauchi
patent: 2003/0223276 (2003-12-01), Yamaoka et al.
patent: 2006/0157738 (2006-07-01), Kawanaka
patent: 2007/0029607 (2007-02-01), Kouznetzov
patent: 2008/0055967 (2008-03-01), Houston et al.
patent: 11-039879 (1999-02-01), None
patent: 2003-86713 (2003-03-01), None
patent: 2003-151277 (2003-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4149536