Semiconductor memory device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C257S315000, C257S370000

Reexamination Certificate

active

07636256

ABSTRACT:
A semiconductor memory device includes a memory cell string provided on a semiconductor substrate, and a first select transistor including a gate insulation film, which is provided on the semiconductor substrate having a recess structure which is lower, only at a central portion thereof, than the semiconductor substrate on which the memory cell string is provided, and a gate electrode provided on the gate insulation film, the first select transistor selecting the memory cell string.

REFERENCES:
patent: 7456466 (2008-11-01), Om et al.
patent: 2006/0023558 (2006-02-01), Cho et al.
patent: 2007/0002622 (2007-01-01), Matsunaga et al.

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