Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-08-13

2009-06-02

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S171000, C365S173000, C365S158000

Reexamination Certificate

active

07542326

ABSTRACT:
A semiconductor memory device comprises an array of memory cells each comprising a variable resistance element and a cell access transistor, and a voltage supplying means for applying the first voltage between the bit and source lines connected to the selected memory cell, the third voltage to the word line to apply the first write voltage between the two ports of the variable resistance element for shifting the resistance from the first state to the second state, and the second voltage opposite in polarity to the first voltage between the bit and source lines, the third voltage to the word line to apply the second write voltage opposite in polarity to and different in the absolute value from the first write voltage between the two ports for shifting the resistance from the second state to the first state, the voltage supplying means comprising an n-channel MOSFET and a p-channel MOSFET.

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Zhuang et al. (Dec. 2002). “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM),” IEDM Report No. 7.5.

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