Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-08-15

2009-06-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S096000

Reexamination Certificate

active

07542367

ABSTRACT:
A write voltage source is capable of applying a write voltage, which is a high voltage. An antifuse is connected at one end to the write voltage source and has a resistance irreversibly variable based on the write voltage. A sense node is connectable to the other end of the antifuse. A sense amp compares the potential on the sense node with a reference potential. The sense node is used to accumulate charge thereon. To control the potential difference placed between both ends of the antifuse, a third transistor is provided having one end connected to the sense node. The third transistor is provided with a precharge voltage source on the other end, and a precharge controller operative to on/off control the gate.

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