Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-24
2009-02-10
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S390000, C257S758000
Reexamination Certificate
active
07489010
ABSTRACT:
In a semiconductor memory device with NAND cell units arranged, two first select gate lines in adjacent blocks sandwiching a bit line contact are formed to have first connection portions disposed at a certain pitch, where the two first select gate lines are connected to each other; two second select gate lines in adjacent blocks sandwiching a source line contact are formed to have second connection portions disposed at substantially the same pitch as the first connection portions, where the two second select gate lines are connected to each other; and the first and second shunt wirings are contacted with the first and second select gate lines at the first and second connection portions, respectively.
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U.S. Appl. No. 11/235,206, filed Sep. 27, 2005, Yasushi Kameda, et al.
Bernstein Allison P
Elms Richard
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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