Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2008-03-04
2009-08-11
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S230060, C365S191000, C365S189160
Reexamination Certificate
active
07573757
ABSTRACT:
Disclosed herein is a semiconductor memory device for reducing a current consumption used for operating a write command or a read command. The semiconductor memory device includes a global data latch unit for latching a global data loaded on a global data line in response to a first write enable signal to thereby generate a global latch data; a local data write driving unit for receiving the global latch data to output a local data to a local data line in response to a second write enable signal; and a write driver control unit for generating the first write enable signal and the second write enable signal to inactivate the first write enable signal when a write operation is not performed.
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Cho Ho-Youb
Ha Sung-Joo
Ho Hoai V
Hynix / Semiconductor Inc.
Mannava & Kang P.C.
Tran Anthan T
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