Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-07-10
2009-11-03
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230030, C365S189040, C365S189140, C365S189070
Reexamination Certificate
active
07613056
ABSTRACT:
In a semiconductor memory device provided with a redundancy circuit for conducting a repair of defective memory cells, the memory cell defects which are unevenly distributed can be efficiently repaired.The semiconductor memory device has a plurality of memory blocks, and the memory block includes a plurality of segments. A redundancy memory block which substitutes for defective data of a segment is physically provided to each of the plurality of memory blocks. A block address of the redundancy memory block is logically allocated to the plurality of memory blocks in common.
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Koshikawa Yasuji
Ogawa Sumio
Elpida Memory Inc.
Le Thong Q
Sughrue & Mion, PLLC
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