Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-11-28

2009-02-10

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S063000, C365S156000

Reexamination Certificate

active

07489539

ABSTRACT:
In a multiport SRAM memory cell of the present invention, an access transistor of a first port is disposed in a p-type well, and an access transistor of a second port is disposed in a p-type well. The gates of all of transistors disposed in a memory cell extend in the same direction. With the configuration, a semiconductor memory device having a low-power consumption type SRAM memory cell with an increased margin of variations in manufacturing, by which a bit line can be shortened in a multiport SRAM memory cell or an associative memory, can be obtained.

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Japanese Office Action issued in Japanese Patent Application No. JP 2002-098553, mailed Sep. 16, 2008.

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