Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-08-27

1994-08-02

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257307, 257308, 257773, H01L 2968

Patent

active

053348699

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells each including a transistor formed on a surface of a semiconductor substrate and having one terminal, and a capacitor formed on the semiconductor substrate and having first and second electrodes, with the first electrode being connected with one terminal of the transistor. The first electrode of the capacitor includes a principal portion of either a generally rectangular cubic configuration or a generally cup-shaped configuration, a peripheral portion spaced from and surrounding a peripheral side wall of the principal portion and a bottom portion connecting an end of the principal portion with an end of the peripheral portion. On the other hand, the second electrode of the capacitor includes respective portions confronting the principal portion, the peripheral portion and the bottom portion of the first electrode.

REFERENCES:
patent: 5047817 (1991-09-01), Wakamiya et al.
patent: 5140389 (1992-08-01), Kimura et al.
"Stacked Capacitor Cells For High-Density Dynamic RAMs" ULSI Research Center, pp. 600-603 by Watanabe et al. Dec. 1988.
"A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-Line Structure" pp. 596-599 by Kimura et al. Dec. 1988.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS" pp. 592-595 by Ema et al. Dec. 1988.
"A Novel Storage Capacitance Enlargement Structure Using a Double-Stacked Storage Node in STC DRAM Cell" pp. 581-584, Kisu et al., 1988 Conference.
"Novel Stacked Capacitor Cell for 64Mb DRAM" LSI&D Laboratory, Mitsubishi Electric Corp., pp. 69-70 by Wakamiya et al. VLSI Technology Symposium 1988.

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