Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-12-29
2008-11-04
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S194000, C365S230060
Reexamination Certificate
active
07447090
ABSTRACT:
A semiconductor memory device includes: a first bit line sense amplifier array for amplifying a data input to a first bit line pair coupled to cells; a second bit line sense amplifier array for amplifying a data input to a second bit line pair coupled to the cells; and a control unit for activating one of the first and second bit line sense amplifier arrays and, after a predetermined time, for activating the other bit line sense amplifier array in response to an active signal and a column address information signal.
REFERENCES:
patent: 5608688 (1997-03-01), Park
patent: 5768201 (1998-06-01), Oh
patent: 6144230 (2000-11-01), Kim
patent: 7002862 (2006-02-01), Kang
patent: 7230862 (2007-06-01), Kim et al.
patent: 2004/0240293 (2004-12-01), Lee
patent: 2002-230978 (2002-08-01), None
Hynix / Semiconductor Inc.
Lam David
McDermott Will & Emery LLP
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