Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S194000, C365S230060

Reexamination Certificate

active

07447090

ABSTRACT:
A semiconductor memory device includes: a first bit line sense amplifier array for amplifying a data input to a first bit line pair coupled to cells; a second bit line sense amplifier array for amplifying a data input to a second bit line pair coupled to the cells; and a control unit for activating one of the first and second bit line sense amplifier arrays and, after a predetermined time, for activating the other bit line sense amplifier array in response to an active signal and a column address information signal.

REFERENCES:
patent: 5608688 (1997-03-01), Park
patent: 5768201 (1998-06-01), Oh
patent: 6144230 (2000-11-01), Kim
patent: 7002862 (2006-02-01), Kang
patent: 7230862 (2007-06-01), Kim et al.
patent: 2004/0240293 (2004-12-01), Lee
patent: 2002-230978 (2002-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4037178

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.