Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-03-28

2008-12-30

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000

Reexamination Certificate

active

07471549

ABSTRACT:
A semiconductor memory device includes a write line, at least three first data-writing circuits which are connected to the write line, and memory cells which include a magnetoresistive element, are connected electrically and/or magnetically to the write line, and are arranged between the first data-writing circuits.

REFERENCES:
patent: 6868005 (2005-03-01), Hidaka
patent: 7085174 (2006-08-01), Hidaka
patent: 2004/0081004 (2004-04-01), Okazawa
patent: 2002-170376 (2002-06-01), None
U.S. Appl. No. 11/065,143, filed Feb. 24, 2005, Tsuneo Inaba.
U.S. Appl. No. 11/298,597, filed Dec. 12, 2005, Ryousuke Takizawa et al.
Mark Durlam, et al., “A 1-Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects”, IEEE Journal of Solid-State Circuits, vol. 38, No. 5, May 2003, pp. 769-773.
A. Bette, et al., “A High-Speed 128Kbit MRAM Core for Future Universal Memory Applications”, Symposium on VLSI Circuits Digest of Technical Papers, Jun. 2003, pp. 217-220.

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