Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-12-22

2008-08-19

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07414879

ABSTRACT:
A semiconductor memory device includes a memory cell block including a plurality of memory cells connected in series between first node and second node, the memory cells including a magnetoresistive element and a switching transistor, which are connected in parallel, the magnetoresistive element being a spin injection type and including a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a non-magnetic layer interposed between the fixed layer and the recording layer, a bit line connected to the first node via a selection transistor, a word line connected to a gate of the switching transistor, and a write line connected to the second node.

REFERENCES:
patent: 6211559 (2001-04-01), Zhu et al.
patent: 6826076 (2004-11-01), Asano et al.
patent: 7042753 (2006-05-01), Horiguchi
patent: 7145795 (2006-12-01), Ghodsi
patent: 7251152 (2007-07-01), Roehr

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