Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S205000, C365S230030

Reexamination Certificate

active

07423924

ABSTRACT:
In a semiconductor memory device which includes a shared sense amplifier portion, a pair of memory cell portions disposed on opposite sides of the shared sense amplifier portion, a pair of transfer gates between the pair of memory cell portions and the shared sense amplifier portion, and bit lines constituting a plurality of bit line pairs and connecting the pair of memory cell portions to each other through the pair of transfer gates and the shared sense amplifier portion, the bit lines in a bit line pair of the plurality of bit line pairs are twisted at a substantial center between the pair of transfer gates on the opposite sides.

REFERENCES:
patent: 5010524 (1991-04-01), Fifield et al.
patent: 5016224 (1991-05-01), Tanaka et al.
patent: 7106626 (2006-09-01), Goldman et al.
patent: 2-166690 (1990-06-01), None
patent: 63-148489 (1998-06-01), None
patent: 2000-123574 (2000-04-01), None
patent: 1995-0008671 (1995-08-01), None

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