Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-04-08

2008-04-08

Phung, Ahn (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S203000

Reexamination Certificate

active

11396193

ABSTRACT:
A semiconductor memory device includes a first first-type well including a first cell array for storing a data to apply the data to one of a first bit line and a first bit line bar, and a first precharge MOS transistor having a second-type channel for equalizing voltage levels of the first bit line and the first bit line bar; a first second-type well including a first sense amplifying MOS transistor having a first-type channel for sensing and amplifying the signal difference between the first bit line and the first bit line bar, and a first connection MOS transistor; and a second first-type well including a second sense amplifying MOS transistor having a second-type channel for sensing and amplifying the signal difference between the first bit line and the first bit line bar.

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