Semiconductor memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Reexamination Certificate

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11253626

ABSTRACT:
A semiconductor memory device includes: phase-change memory cells whose states change to a set resistance state or a reset resistance state in response to an applied current pulse; a set pulse driving circuit outputting a set current pulse having first through n-th stages in response to a first control signal and a set control signal, wherein current amounts of the first through n-th stages are sequentially reduced and are all greater than a reference current amount; a reset pulse driving circuit outputting a reset current pulse in response to a second control signal; a pull-down device activating the set pulse driving circuit and the reset pulse driving circuit in response to a third control signal; and a write driver control circuit outputting the first through third control signals in response to write data, a set pulse width control signal, and a reset pulse width control signal.

REFERENCES:
patent: 6487113 (2002-11-01), Park et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 7012834 (2006-03-01), Cho et al.
patent: 2001-024485 (2001-01-01), None

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